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Hot-electron noise generation in gallium-arsenide Schottky-barrier diodes

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2 Author(s)
Keen, N.J. ; Max-Planck-Institut fÿr Radioastronomie, Bonn, West Germany ; Zirath, H.

Measurements of excess (hot-electron) noise in a GaAs Schottky-barrier diode at room temperature are reported. A monotonic decrease with increasing frequency is found. It is concluded that only diode hot-electron noise at intermediate frequency contributes to the excess noise of a mixer.

Published in:

Electronics Letters  (Volume:19 ,  Issue: 20 )

Date of Publication:

September 29 1983

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