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Anodic oxide gate a-Si:H MOSFET

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5 Author(s)
Yamamoto, H. ; Hokkaido University, Department of Electrical Engineering, Faculty of Engineering, Sapporo, Japan ; Sawada, T. ; Arimoto, S. ; Hasegawa, H.
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The first a-Si:H MOSFET having native oxide at the insulator/a-Si:H interface is reported. Anodic oxidation in the AGW electrolyte is applied to Al/a-Si:H structures to form Al2O3/native oxide/a-Si:H gate structures. Resulting FETs show typical effective mobilities of 0.02 cm2/V s after proper low-temperature annealing in H2. Anodic oxidation is thus proved to be applicable to a-Si:H device technology as a low-temperature oxidation process.

Published in:

Electronics Letters  (Volume:19 ,  Issue: 16 )

Date of Publication:

August 4 1983

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