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Amorphous-silicon FET array for LCD panel

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4 Author(s)
Katoh, K. ; Stanley Electric Co., Research & Development Laboratory, Yokohama, Japan ; Yasui, M. ; Kuniyasu, S. ; Watanabe, H

A small 20 × 20 dot matrix array of a FET has been fabricated on a glass substrate using a-Si films as the semiconductor and silicon nitride deposited from a N2-SiH4 mixture as the gate insulator. Good operation is obtained for both TN-mode and GH-mode in transparent-type LCDs. The improved fabrication process and structure are reported.

Published in:

Electronics Letters  (Volume:19 ,  Issue: 14 )