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Degradation mechanism in 1.3 ¿m InGaAsP/InP buried crescent laser diode at a high temperature

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6 Author(s)
E. Oomura ; Mitsubishi Electric Corporation, LSI Research & Development Laboratory, Itami, Japan ; H. Higuchi ; R. Hirano ; Y. Sakakibara
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A leakage current flowing through a junction between a p-InP current blocking layer and an n-InP cladding layer is examined in connection with a degradation of a buried crescent laser diode at a high temperature. The degradation characteristics have been successfully explained by a theoretical model proposed in this study.

Published in:

Electronics Letters  (Volume:19 ,  Issue: 11 )