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Effect of electric fields on long-wavelength response of infra-red detectors

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2 Author(s)
D. D. Coon ; University of Pittsburgh, Department of Physics, Pittsburgh, USA ; R. P. G. Karunasiri

The effect of electric fields on extrinsic semiconductor infrared-detector response at low temperatures is examined quantitatively at wavelengths beyond the zero-field cutoff. General formulas are presented along with numerical results for Si:P and Si:In. These results illustrate the possibility of narrow-bandwidth detection and electronically modulated response.

Published in:

Electronics Letters  (Volume:19 ,  Issue: 8 )