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New temperature fluctuation method for direct determination of thermal activation energy of deep levels in semiconductors

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2 Author(s)
V. Kumar ; Indian Institute of Science, Department of Physics, Bangalore, India ; H. Indusekhar

A new method is suggested where the thermal activation energy is measured directly and not as a slope of an Arrhenius plot. The sample temperature T is allowed to fluctuate about a temperature T0. The reverse-biased sample diode is repeatedly pulsed towards zero bias and the transient capacitance C1 at time t1 is measured The activation energy is obtained by monitoring the fluctuations in C1 and T. The method has been used to measure the activation energy of the gold acceptor level in silicon.

Published in:

Electronics Letters  (Volume:19 ,  Issue: 7 )