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GaAs integrated digital-to-analogue convertor for control of power dual-gate FETs

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3 Author(s)
Saunier, P. ; Texas Instruments Incorporated, Dallas, USA ; Kim, B. ; Frensley, W.R.

We are reporting the design, fabrication and performance of a TTL compatible 4-bit GaAs integrated digital-to-analogue convertor with an output voltage between ¿2.8 V and +2.8 V. This circuit has been especially designed to control the gain of power dual-gate FETs by applying a voltage on the capacitively terminated second gate.

Published in:

Electronics Letters  (Volume:19 ,  Issue: 5 )

Date of Publication:

March 3 1983

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