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High-speed GaAlAs-GaAs heterojunction bipolar transistors with near-ballistic operation

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4 Author(s)
D. Ankri ; Cornell University, School of Electrical Engineering and National Research & Resource Facility for Submicron Structures, Ithaca, USA ; W. J. Schaff ; P. Smith ; L. F. Eastman

GaAlAs-GaAs heterojunction bipolar transistors (HBTs) with an abrupt emitter-base interface have been realised by molecular-beam epitaxy (MBE) on semi-insulating substrates. A gain-bandwidth product FT of 15 GHz has been measured for Ic = 20 mA and VCE = 8 V. These results are the best reported so far for HBTs and are very promising for high-speed logic.

Published in:

Electronics Letters  (Volume:19 ,  Issue: 4 )