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Browse Journals & Magazines > Electronics Letters ...> Volume:19 Issue:4 Help

High-speed GaAlAs-GaAs heterojunction bipolar transistors with near-ballistic operation

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4 Author(s)
Ankri, D. ; Cornell University, School of Electrical Engineering and National Research & Resource Facility for Submicron Structures, Ithaca, USA ; Schaff, W.J. ; Smith, P. ; Eastman, L.F.

GaAlAs-GaAs heterojunction bipolar transistors (HBTs) with an abrupt emitter-base interface have been realised by molecular-beam epitaxy (MBE) on semi-insulating substrates. A gain-bandwidth product FT of 15 GHz has been measured for Ic = 20 mA and VCE = 8 V. These results are the best reported so far for HBTs and are very promising for high-speed logic.

Published in:
Electronics Letters  (Volume:19 ,  Issue: 4 )

Date of Publication: February 17 1983

Page(s):
147 - 149
ISSN :
0013-5194
Digital Object Identifier :
10.1049/el:19830104
Product Type:
Journals & Magazines
Date of Current Version :
11 July 2007
Issue Date :
February 17 1983
Sponsored by :
Institution of Engineering and Technology

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