Referenced Items are not available for this document.
GaAlAs-GaAs heterojunction bipolar transistors (HBTs) with an abrupt emitter-base interface have been realised by molecular-beam epitaxy (MBE) on semi-insulating substrates. A gain-bandwidth product FT of 15 GHz has been measured for Ic = 20 mA and VCE = 8 V. These results are the best reported so far for HBTs and are very promising for high-speed logic.
Published in:
Electronics Letters
(Volume:19
,
Issue:
4
)
Date of Publication: February 17 1983
- Page(s):
- 147 - 149
- ISSN :
- 0013-5194
- Digital Object Identifier :
- 10.1049/el:19830104
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 11 July 2007
- Issue Date :
- February 17 1983
- Sponsored by :
- Institution of Engineering and Technology
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