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Substrate bias effect for C-MOS operational amplifier using SIMOX technology

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2 Author(s)
Akiya, M. ; NTT, Musashino Electrical Communication Laboratory, Musashino, Japan ; Kimura, T.

The substrate bias effect for SIMOX devices is described. By setting the substrate bias voltage to the accumulation mode in the bulk, the kink onset voltage for the N-ch MOSFET has been found to increase. Open-loop voltage gain for a C-MOS two-stage operational amplifier has been enhanced up to 65 dB.

Published in:

Electronics Letters  (Volume:19 ,  Issue: 2 )