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Browse Journals & Magazines > Electronics Letters ...> Volume:18 Issue:25 Help

Measurement of radiative recombination coefficient and carrier leakage in 1.3 ¿m InGaAsP lasers with lightly doped active layers

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4 Author(s)
Su, C.B. ; GTE Laboratories, Incorporated, Transmission Technology Center, Waltham, USA ; Schlafer, J. ; Manning, J. ; Olshansky, R.

Carrier lifetime and spontaneous emission data for InGaAsP lasers with lightly doped active layers are used to measure the carrier-dependent radiative coefficient B(n) and the leakage current due to electron drift. The Auger recombination coefficient is less than 0.1 × 10¿28 cm6/s.

Published in:
Electronics Letters  (Volume:18 ,  Issue: 25 )

Date of Publication: December 9 1982

Page(s):
1108 - 1110
ISSN :
0013-5194
Digital Object Identifier :
10.1049/el:19820756
Product Type:
Journals & Magazines
Date of Current Version :
11 July 2007
Issue Date :
December 9 1982
Sponsored by :
Institution of Engineering and Technology

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