Cart (Loading....) | Create Account
Close category search window
 

High-mobility selectively doped GaAs/GaAlAs structures grown by low-pressure OM-VPE

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Hersee, S.D. ; Thomson-CSF, Laboratoire Central de Recherches, Orsay, France ; Hirtz, J.P. ; Baldy, M. ; Duchemin, J.P.

We report the growth of high-quality selectively doped GaAs/GaAlAs heterostructures grown by OM-VPE. Electron mobilities as high as 162000 cm2V¿1s¿1 have been obtained at 2 K. The sheet carrier concentration was varied between 5 × 1011 cm¿2 and 1.5 × 1012 cm¿2 by changing the `spacer¿ thickness and the doping level in the n-type GaAlAs.

Published in:

Electronics Letters  (Volume:18 ,  Issue: 25 )

Date of Publication:

December 9 1982

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.