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High-mobility selectively doped GaAs/GaAlAs structures grown by low-pressure OM-VPE

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4 Author(s)
S. D. Hersee ; Thomson-CSF, Laboratoire Central de Recherches, Orsay, France ; J. P. Hirtz ; M. Baldy ; J. P. Duchemin

We report the growth of high-quality selectively doped GaAs/GaAlAs heterostructures grown by OM-VPE. Electron mobilities as high as 162000 cm2V¿1s¿1 have been obtained at 2 K. The sheet carrier concentration was varied between 5 × 1011 cm¿2 and 1.5 × 1012 cm¿2 by changing the `spacer¿ thickness and the doping level in the n-type GaAlAs.

Published in:

Electronics Letters  (Volume:18 ,  Issue: 25 )