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Spatial distribution of hot electrons as a physical limit to MOS transistor performance

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2 Author(s)
Schmitt-Landsiedel, S. ; Siemens AG, Research Laboratories, Mÿnchen, West Germany ; Dorda, G.

The spatial distribution of the free carriers in the channel of a MOS transistor is changed in the hot-electron regime. There the electron distance from the oxide is enlarged, causing a reduction of gate capacitance and transistor current. This is a physical limit to the performance of MOSFETs with short channels and thin gate oxides.

Published in:

Electronics Letters  (Volume:18 ,  Issue: 24 )