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Room-temperature CW operation of 1.3 ¿m distributed-feedback GaInAsP/InP lasers

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3 Author(s)
Uematsu, Y. ; Toshiba Corporation, Research & Development Center, Kawasaki, Japan ; Okuda, H. ; Kinoshita, J.

Distributed-feedback GaInAsP/InP lasers with a low threshold current emitting at 1.3 ¿m have been successfully fabricated. A minimum CW threshold current of 66 mA was obtained at room temperature. The temperature coefficient of lasing wavelength was 1 Å/°C, which is about a fifth of that for Fabry-Perot lasers. A stable single longitudinal mode was obtained up to 52°C in a p-side-up configuration.

Published in:

Electronics Letters  (Volume:18 ,  Issue: 20 )