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Ultra-low threshold, graded-index waveguide, separate confinement, CW buried-heterostructure lasers

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3 Author(s)
W. T. Tsang ; Bell Laboratories, Murray Hill, USA ; R. A. Logan ; J. A. Ditzenberger

Ultra-low-threshold semiconductor diode lasers were fabricated by forming buried heterostructures from MBE-grown graded-index waveguide, separate-confinement heterostructure (GRIN-SCH) wafers. CW threshold currents as low as 2.5 mA for 250 ¿m cavity length, output power as high as 20 mW/mirror and external quantum efficiency as high as 80% were obtained.

Published in:

Electronics Letters  (Volume:18 ,  Issue: 19 )