Referenced Items are not available for this document.
Analytical and numerical models have been used to analyse the electrical behaviour of HLE-BSF n+-n-p-p+ silicon solar cells. It is shown that this structure should have lower open-circuit voltage values than the simple HLE solar cell due to the recombination current in the p+ region. Back surface passivation is proposed as a means to improve the Voc, that can be as high as 650 mV.
Published in:
Electronics Letters
(Volume:18
,
Issue:
18
)
Date of Publication: September 2 1982
- Page(s):
- 789 - 790
- ISSN :
- 0013-5194
- Digital Object Identifier :
- 10.1049/el:19820534
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 11 July 2007
- Issue Date :
- September 2 1982
- Sponsored by :
- Institution of Engineering and Technology
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