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InP high mobility enhancement MISFETs using anodically grown double-layer gate insulator

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2 Author(s)
Sawada, T. ; Hokkaido University, Department of Electrical Engineering, Faculty of Engineering, Sapporo, Japan ; Hasegawa, H.

High-mobility InP enhancement MISFETs are fabricated with the use of a novel double-layer gate insulator consisting of Al2O3 and native oxide, both grown anodically by a simple process. Applying a fairly high-temperature annealing (400°C), channel mobilities of 1500¿3000 cm2/Vs and a large reduction of drain current drift are achieved.

Published in:

Electronics Letters  (Volume:18 ,  Issue: 17 )

Date of Publication:

August 19 1982

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