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Large-signal operation of PIN IMPATT diodes for pulsed oscillators at millimetre-wave frequencies

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2 Author(s)
M. Claassen ; Technische Universität München, Lehrstuhl für Allgemeine Elektrotechnik und Angewandte Elektronik, München, West Germany ; W. Harth

The specific RF power generation mechanism of PIN-IMPATT diodes at high current density as applied in pulsed operation is described and confirmed by a realistic computer model. It is shown that these devices can be operated at large-signal avalanche resonance, where they deliver relatively high output power at high impedance level.

Published in:

Electronics Letters  (Volume:18 ,  Issue: 17 )