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Regenerative switching device using MBE-grown gallium arsenide

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5 Author(s)
C. E. C. Wood ; Cornell University, School of Electrical Engineering & National Research & Resource Facility for Submicron Structures, Ithaca, USA ; L. F. Eastman ; K. Board ; K. Singer
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A new form of two-state switching device is proposed which is formed entirely within the semiconductor bulk during epitaxial growth. The predicted switching action is demonstrated using MBE-grown gallium arsenide and the device is shown to have optical sensitivity. The device is amenable to simple design rules and is free of the `forming¿ state often associated with the tunnel MIS switch.

Published in:

Electronics Letters  (Volume:18 ,  Issue: 15 )