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Interface state impedance has been theoretically predicted to introduce spurious detailed structures in the trap density curves when determined by high-frequency C/V measurements (Terman method). This is experimentally demonstrated on irradiated MOS structures. Terman analysis of these MOS capacitors presents a peak in the trap density near the conduction band, while a flat continuum is found by deep level transient spectroscopy (DLTS). A numerical simulation shows that this discrepancy can be taken into account by the only interface state impedance effect.