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Comparison of interface state density in MIS structure deduced from DLTS and Terman measurements

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2 Author(s)
E. Rosencher ; Centre National d'Etudes des Télécommunications, Centre Norbert Segard, Meylan, France ; D. Bois

Interface state impedance has been theoretically predicted to introduce spurious detailed structures in the trap density curves when determined by high-frequency C/V measurements (Terman method). This is experimentally demonstrated on irradiated MOS structures. Terman analysis of these MOS capacitors presents a peak in the trap density near the conduction band, while a flat continuum is found by deep level transient spectroscopy (DLTS). A numerical simulation shows that this discrepancy can be taken into account by the only interface state impedance effect.

Published in:

Electronics Letters  (Volume:18 ,  Issue: 13 )