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High-speed low-power DCFL using planar two-dimensional electron gas FET technology

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6 Author(s)
Pham N. Tung ; Thomson-CSF, Central Research Laboratory, Orsay, France ; P. Delescluse ; D. Delagebeaudeuf ; M. Laviron
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Planar two-dimensional electron gas FETs (TEGFETs) have been shown to have ultra-high speed and low power in DCFL circuits operating at room temperature: 18.4 ps at 900 ¿W and 32.5 ps at 62 ¿W. The latter result and the simplicity of the process involved are compatible with VLSI requirements.

Published in:

Electronics Letters  (Volume:18 ,  Issue: 12 )