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Thin MBE GaAs millimetre-wave mixer diode using Ge substrate

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3 Author(s)
Christou, A. ; Naval Research Laboratory, Washington, USA ; Davey, J.E. ; Covington, D.

Thin substrateless MBE GaAs diodes have been processed for mixer applications. MBE growth of an inverted n/n+ GaAs structure on Ge was achieved. The Ge substrate was removed by preferential etching. A noise figure of less than 6.0 dB at 94 GHz was obtained.

Published in:

Electronics Letters  (Volume:18 ,  Issue: 9 )

Date of Publication:

April 29 1982

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