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Monte Carlo particle simulation of GaAs submicron n+-i-n+ diode

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4 Author(s)
Awano, Y. ; Electrotechnical Laboratory, Tsukuba, Japan ; Tomizawa, K. ; Hashizume, N. ; Kawashima, M.

Monte Carlo particle simulation of a GaAs submicron n+-i-n+ diode showed that the electron transport in the diode is almost ballistic in nature, so long as the electron energy is below 0.36 eV. A maximum electron velocity of 1 × 108 cm s¿1 was observed at certain conditions. Effects of the electron backscattering from the anode n+-layer are also discussed.

Published in:

Electronics Letters  (Volume:18 ,  Issue: 3 )