By Topic

Room temperature CW operation of GaInAsP/InP double heterostructure diode lasers emitting at 1.5 ¿m grown by low pressure metalorganic chemical vapour deposition (LP-MO CVD)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Razeghi, M. ; Thomson-CSF, Etablissement de Corbeville, Orsay, France ; Hirtz, P. ; Blondeau, R. ; Larivain, J.P.
more authors

Room temperature continuous wave (CW) operation at 1.5 ¿m has been achieved in GaInAsP/InP DH lasers fabricated on material grown by low-pressure metalorganic chemical vapour deposition (LP-MO CVD). Threshold currents as low as 200 mA DC have been measured for devices with a stripe width of 9 ¿m and a cavity length of 300 ¿m. Values of To as high as 64 K have been obtained, where To is defined by the expression Jth(T) = Jth(0) exp (T/To). Fundamental transverse mode oscillation has been achieved up to an output power of 10 mW.

Published in:

Electronics Letters  (Volume:18 ,  Issue: 3 )