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Double heterojunction NpN GaAlAs/GaAs bipolar transistor

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2 Author(s)
Beneking, H. ; Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany ; Su, L.M.

Double heterojunction NpN Ga0.7Al0.3As/GaAsAs/Ga0.7Al0.3-As bipolar transistors have been developed and tested. Besides a wide-gap emitter a wide-gap collector was added to form the NpN double heterojunction structure, which can be operated as a bipolar transistor in bidirection. I/V measurements show that the turn-on voltage of about 0.2 V, which is the normal case in Npn wide-gap emitter GaAsAs/Ga0.7Al0.3As transistors (common emitter), is eliminated. As compared with the Npn GaAs transistor the storage time ts of the NpN GaAs transistor is reduced by a factor of about 2.

Published in:

Electronics Letters  (Volume:18 ,  Issue: 1 )