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1.3¿m InGaAsP/InP light emitting diodes with internally defined emission area prepared by single-step LPE technique

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1 Author(s)
Heinen, J. ; Siemens AG, Research Laboratories, Mÿnchen, West Germany

An LPE single-step process is described for the fabrication of InGaAsP/InP double heterostructure surface emitting LEDs with internally defined emission area. The technique provides a simple production method which lends itself to simple upside-up mounting of LED chips and application of back surface mirrors for enhancement of light extraction efficiency.

Published in:

Electronics Letters  (Volume:18 ,  Issue: 1 )

Date of Publication:

January 7 1982

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