Cart (Loading....) | Create Account
Close category search window
 

Nonradiative regions in GaInAsP/InP double heterostructure laser material: correlation with dislocation clusters in the substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Elliott, C.R. ; British Telecom Research Laboratories, Ipswich, UK ; Regnault, J.C. ; Wakefield, B.

The results of an examination of GaInAsP/InP laser material grown by liquid phase epitaxy using transmission cathodoluminescence, polarised infra-red microscopy and electrochemical etching techniques are reported. It is shown that dislocation clusters in the InP substrate give rise to non-radiative regions in the active layer.

Published in:

Electronics Letters  (Volume:18 ,  Issue: 1 )

Date of Publication:

January 7 1982

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.