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Nonradiative regions in GaInAsP/InP double heterostructure laser material: correlation with dislocation clusters in the substrates

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3 Author(s)
Elliott, C.R. ; British Telecom Research Laboratories, Ipswich, UK ; Regnault, J.C. ; Wakefield, B.

The results of an examination of GaInAsP/InP laser material grown by liquid phase epitaxy using transmission cathodoluminescence, polarised infra-red microscopy and electrochemical etching techniques are reported. It is shown that dislocation clusters in the InP substrate give rise to non-radiative regions in the active layer.

Published in:

Electronics Letters  (Volume:18 ,  Issue: 1 )

Date of Publication:

January 7 1982

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