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~1.40 eV emission band in GaAs

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5 Author(s)
S. H. Xin ; Cornell University, School of Electrical Engineering and National Research & Resource Facility for Submicron Structures, Ithaca, USA ; C. E. C. Wood ; D. DeSimone ; S. Palmateer
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Photoluminescence techniques have been used to detect and characterise the ~ 1.40 eV emission band in an Mn-doped GaAs MBE epilayer and heated semi-insulating Cr-doped GaAs. An activation energy ~ 110 ± 5 meV is obtained from the temperature quenching of the emission intensity, and evidence indicated that physical movement of the Mn atom is responsible for type conversion.

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Electronics Letters  (Volume:18 ,  Issue: 1 )