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InGaAsP planar buried heterostructure laser diode (PBH-LD) with very low threshold current

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7 Author(s)
Mito, I. ; Nippon Electric Co. Ltd., Opto-Electronics Research Laboratories, Kawasaki, Japan ; Kitamura, M. ; Kaede, K. ; Odagiri, Y.
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Using a new LPE growth technique, an InGaAsP/InP planar buried heterostructure laser diode (PBH-LD) has been realised in 1.3 and 1.5 ¿m wavelength regions. As a result of the effective carrier confinement, CW threshold currents as low as 8.5 mA and 13 mA have been obtained in 1.3 and 1.5 ¿m PHB-LDs, respectively, at room temperature.

Published in:

Electronics Letters  (Volume:18 ,  Issue: 1 )