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Effect of substrate orientation on electrical properties of LPE-grown InP

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4 Author(s)
Akita, K. ; Fujitsu Laboratories Ltd., Kawasaki, Japan ; Yamaguchi, A. ; Nakajima, K. ; Takanohashi, T.

The carrier concentrations of LPE-grown layers on (111)B substrates are about twice that of layers grown simultaneously on (100) substrates from the same solution. The analysis shows that the distribution coefficient for donor impurity is about 2.5 times larger in the case of (111)B face than that of (100) face.

Published in:

Electronics Letters  (Volume:17 ,  Issue: 24 )