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Self-aligned normally off GaAs MESFET using Sn-doped SiO2 glass

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2 Author(s)
Ishii, Y. ; NTT, Electrical Communication Laboratories, Musashino, Japan ; Kawasaki, Y.

An improved normally-off GaAs MESFET was fabricated by employing Sn-doped SiO2 glass, which was used as an Sn-diffusant for making the N+ layer. An N+ layer with Rs=100$/¿ and Ns=3×1013 cm¿2 was successfully obtained under 800°C, 20 min diffusion conditions. A new self-alignment technique, using doped-SiO2 film, provided a high performance normally-off GaAs FET.

Published in:

Electronics Letters  (Volume:17 ,  Issue: 22 )

Date of Publication:

October 29 1981

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