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Application of feedback techniques to the realisation of hybrid and monolithic broadband low-noise-and-power GaAs FET amplifiers

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1 Author(s)
R. S. Pengelly ; Plessey Research (Caswell) Ltd., Towcester, UK

The implementation of ultrabroadband low-noise GaAs FET amplifiers operating up to 20 GHz is shown to be possible with the use of a low-parasitic high-gm device, which can only be implemented using monolithic circuit techniques. An example of a 0.1 to 6 GHz hybrid low-noise amplifier to illustrate the circuit technique is described.

Published in:

Electronics Letters  (Volume:17 ,  Issue: 21 )