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Browse Journals & Magazines > Electronics Letters ...> Volume:17 Issue:20 Help

Interface states in MOSFETs due to hot-electron injection determined by the charge pumping technique

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2 Author(s)
Schmitt, D. ; Siemens AG, Research Laboratories, München, West Germany ; Dorda, G.

The charge pumping technique is used to characterise interface states in MOSFETs created by hot-electron injection. Donor states near the middle of the bandgap are identified. Two independent methods to determine the location of these states are presented.

Published in:
Electronics Letters  (Volume:17 ,  Issue: 20 )

Date of Publication: October 1 1981

Page(s):
761 - 763
ISSN :
0013-5194
Digital Object Identifier :
10.1049/el:19810535
Product Type:
Journals & Magazines
Date of Current Version :
11 July 2007
Issue Date :
October 1 1981
Sponsored by :
Institution of Engineering and Technology

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