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High-efficiency millimetre-wave silicon impatt oscillators

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4 Author(s)
Gokgor, H.S. ; Plessey Research (Caswell) Ltd., Allen Clark Research Centre, Towcester, UK ; Davies, I. ; Howard, A.M. ; Brookbanks, D.M.

High-efficiency impatt devices and oscillators have been fabricated from epitaxially grown silicon for operation in the frequency range 40¿140 GHz. These devices have produced world state-of-the-art efficiencies and demonstrated the expected relative frequency insensitivity of silicon. Single drift devices have given efficiencies of approximately 8%; and double drift device efficiencies as high as 13.5% at 50 GHz and 12% at 90 GHz. Initial measurements show that the sideband phase noise levels follow a constant deviation law.

Published in:

Electronics Letters  (Volume:17 ,  Issue: 20 )

Date of Publication:

October 1 1981

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