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Room temperature CW operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.23 ¿m grown by low-pressure metalorganic chemical vapour deposition

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7 Author(s)
Razeghi, M. ; Thomson-CSF, Laboratoire Central de Recherches, Orsay, France ; Hirtz, J.P. ; Hirtz, P. ; Larivain, J.P.
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We report the first successful room-temperature CW operation of GaInAsP/InP DH lasers emitting at 1.23 ¿m grown by LP MOCVD. Current thresholds as low as 250 mA have been obtained for CW operation.

Published in:

Electronics Letters  (Volume:17 ,  Issue: 17 )