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Carrier-induced index change in AlGaAs double-heterostructure lasers

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2 Author(s)
J. S. Manning ; GTE Laboratories Incorporated, Communications Products Technology Center, Waltham, USA ; R. Olshansky

A large carrier-induced index change is reported for conventional 8 ¿m-stripe oxide-isolated AlGaAs double-heterostructure lasers. At threshold, the index change of the active layer is ¿0.05 to ¿0.07, which is a factor of 5 to 10 larger than previously reported. It is accompanied by an even greater change in dispersion. These effects cannot be explained by a free-carrier effect, and are most likely caused by a carrier-induced shift of the absorption edge.

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Electronics Letters  (Volume:17 ,  Issue: 14 )