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Low-frequency noise spectrum of GaAs FETs

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1 Author(s)
J. Graffeuil ; CNRS, Laboratoire d'Automatique et d'Analyse des Systèmes, Toulouse, France

In GaAs MESFETs low-frequency noise spectra of various forms are observed. In some cases they are of the form (A/f) {1¿(2/¿) tan¿1 (¿¿0)}. The bias dependence of A and ¿0 is attributed to the variation in channel thickness. Usefulness of low-frequency spectra for MESFET design and application is outlined.

Published in:

Electronics Letters  (Volume:17 ,  Issue: 11 )