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GaAlAs/GaAs heterojunction microwave bipolar transistor

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2 Author(s)
Beneking, H. ; Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany ; Su, L.M.

A GaAlAs/GaAs heterojunction bipolar transistor has been developed and tested. A double base structure was adopted to facilitate critical selective etching problems. An emitter-collector breakdown voltage VCEO as high as 80 V was achieved. Maximum frequency of oscillationfmax of 850 MHz and a cutoff frequency fT of 1.6 GHz were realised. The current-gain/temperature curve shows that the transistor can be operated at temperatures up to 350°C.

Published in:

Electronics Letters  (Volume:17 ,  Issue: 8 )

Date of Publication:

April 16 1981

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