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High speed GaAs digital integrated circuit with clock frequency of 4.1 GHz

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2 Author(s)
R. Yamamoto ; Nippon Electric Co. Ltd., Basic Technology Research Laboratories, Kawasaki, Japan ; A. Higashisaka

A maximum clock frequency of 4.1 GHz was obtained for a GaAs digital integrated circuit using deep recess normally-on GaAs MESFETs with 1.2 ¿m long gate and interdigitated Schottky diodes. The Ti/Pt/Au gate electrode was made by a lift-off technique with conventional photolithography. The minimum propagation delay of a NAND/AND gate was estimated to be 100 ps/gate for a fan-out of 2 from the self-oscillation frequency of the master-slave flip-flops.

Published in:

Electronics Letters  (Volume:17 ,  Issue: 8 )