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Preparation of CuInS2 on GaP grown by LPE

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4 Author(s)
Hwang, H.L. ; National Tsing Hua University, Departments of Electrical Engineering & Materials Science, Hsin-chu, Republic of China ; Lin, W.J. ; Chang, H.J. ; Sun, C.Y.

The letter describes the use of LPE in the preparation of CuInS2 epitaxial layers. Both the tipping and sliding boat methods were adopted for the LPE growth, the latter being found more suitable.

Published in:

Electronics Letters  (Volume:17 ,  Issue: 6 )