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High speed normally-off GaAs MESFET integrated circuit

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3 Author(s)
Katano, F. ; Nippon Electric Co. Ltd., Basic Technology Research Laboratories, Kawasaki, Japan ; Furutsuka, T. ; Higashisaka, A.

Normally-off GaAs MESFET integrated circuits with a maximum toggle frequency of 2.4 GHz were fabricated by conventional photolithography. The unfavourable effect of the surface depletion layer due to the large state density at the GaAs surface has been reduced by adopting the recessed gate FET structure.

Published in:

Electronics Letters  (Volume:17 ,  Issue: 6 )