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Browse Journals & Magazines > Electronics Letters ...> Volume:17 Issue:6 Help

Pressure dependence of hole mobility in In1¿xGaxAsyP1¿y and its relation to alloy scattering

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4 Author(s)
Hayes, J.R. ; University of Surrey, Department of Physics, Guildford, UK ; Tatham, H.L. ; Adams, A.R. ; Greene, P.D.

Pressure-induced changes in the hole mobility of the quaternary alloy In1¿xGaxAsyP1¿y up to 15 kbar indicate that alloy scattering plays an important part in the determination of the low field hole mobility.

Published in:
Electronics Letters  (Volume:17 ,  Issue: 6 )

Date of Publication: March 19 1981

Page(s):
230 - 232
ISSN :
0013-5194
Digital Object Identifier :
10.1049/el:19810163
Product Type:
Journals & Magazines
Date of Current Version :
11 July 2007
Issue Date :
March 19 1981
Sponsored by :
Institution of Engineering and Technology

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