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Improvement in surface morphology of InGaAsP-InP wafers by dummy layer technique

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2 Author(s)
J. Kinoshita ; Toshiba Corporation, Research & Development Center, Kawasaki, Japan ; Y. Uematsu

In LPE growth of an InGaAsP/InP system, a dummy layer was grown successively on the last layer, followed by material selective etching. This technique contributes to the improvement of the surface morphology of the epitaxial wafers and also to high reproducibility in the device fabrication process.

Published in:

Electronics Letters  (Volume:17 ,  Issue: 6 )