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Low breakdown voltage Schottky diode as voltage regulator

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2 Author(s)
R. S. Popovi¿ ; Ei Fabrika Poluprovodnika, Ni¿, Yugoslavia ; D. A. Mladenovi¿

Experimental evidence is given showing that Ag-n-Si Schottky diodes with resistivity about 40 m¿cm have steeper reverse breakdown characteristics than corresponding low-voltage p-n junction regulator diodes fabricated by local epitaxy. Avalanche multiplication in such a diode starts at 1.7 V, and the device has a low positive temperature coefficient of breakdown voltage.

Published in:

Electronics Letters  (Volume:17 ,  Issue: 6 )