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GaAs microwave power FET with polyimide overlay interconnection

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4 Author(s)
Turner, B. ; RSRE MOD(PE), Malvern, UK ; Barr, W.P. ; Cooper, D.P. ; Taylor, D.J.

An overlay interconnection technology has been developed for GaAs microwave power FETs, using polyimide as an insulator. An output power of 1017 mW at 4.3 dB gain was achieved at 8 GHz with 27° power added efficiency from a device with a gate width of 1.2 mm. Comparison with devices without overlay interconnection and having a narrower gate width revealed no evidence for degradation in device performance attributable to the interconnection technology.

Published in:

Electronics Letters  (Volume:17 ,  Issue: 5 )