Referenced Items are not available for this document.
The fabrication of Pt n-p+ silicon Baritt diodes is described which can deliver more than 4 mW at Ka-band frequencies. The diodes were investigated as self-oscillating mixers. A minimum detectable signal of ¿154 dBm as well as a conversion gain of 26 dB could be realised.
Published in:
Electronics Letters
(Volume:16
,
Issue:
22
)
Date of Publication: October 23 1980
- Page(s):
- 827 - 829
- ISSN :
- 0013-5194
- Digital Object Identifier :
- 10.1049/el:19800588
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 11 July 2007
- Issue Date :
- October 23 1980
- Sponsored by :
- Institution of Engineering and Technology
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