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Far-field emission patterns of single heterostructure GaAs lasers

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2 Author(s)
Henshall, G.D. ; Standard Telecommunication Laboratories Ltd., Harlow, UK ; Whiteaway, J.E.A.

The emission patterns of single heterostructure lasers have been calculated as a function of the refractive-index Step between the p GaAs active region and the n GaAs substrate. The conclusions that higher n doping levels should produce better optical confinement and a wider far-field pattern are supported by experimental measurements, from which the refractive index can be deduced.

Published in:

Electronics Letters  (Volume:10 ,  Issue: 15 )