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Effect of leakage current on the power output of s band TRAPATT oscillators

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3 Author(s)
Borrego, J.M. ; Rensselaer Polytechnic Institute, Electrophysics & Electronic Engineering Division, Troy, USA ; Gutmann, R.J. ; Geipel, H.J.

The effect of externally enhanced leakage current on S band TRAPATT diodes is reported. Without enhanced leakage, the TRAPATT has an effective leakage current density of the order of 0·4 A/cm2. Calculations indicate that the leakage current due to carrier storage provides the electron density for initiating the avalanche process.

Published in:

Electronics Letters  (Volume:10 ,  Issue: 14 )

Date of Publication:

July 11 1974

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