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Simple method of m.o.s.-transistor threshold-voltage measurement

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2 Author(s)
W. Marciniak ; Polish Academy of Science, Warsaw, Poland ; M. Rusek

A method of m.o.s.-transistor threshold-voltage measurement is described. The method is based on the measurement of the time interval between the pulse that releases the linear voltage ramp applied to the transistor gate, and the pulse of the transient current resulting from the channel formation. This method is particularly useful for investigation of threshold-voltage instabilities.

Published in:

Electronics Letters  (Volume:10 ,  Issue: 10 )