Referenced Items are not available for this document.
Adjustment of the threshold voltage VT by ion implantation yields a certain distribution of threshold voltages determined by different process parameters. A procedure is presented for minimising the threshold-voltage sensitivity of implanted m.o.s. transistors due to these parameters for a typical set of process parameters.
Published in:
Electronics Letters
(Volume:10
,
Issue:
9
)
Date of Publication: May 2 1974
- Page(s):
- 151 - 152
- ISSN :
- 0013-5194
- Digital Object Identifier :
- 10.1049/el:19740115
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 11 July 2007
- Issue Date :
- May 2 1974
- Sponsored by :
- Institution of Engineering and Technology
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