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Electron dynamics in short-channel InP field-effect transistors

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2 Author(s)
Maloney, T.J. ; Cornell University, School of Electrical Engineering, Ithaca, USA ; Frey, J.

The transient response of electrons to a high field in InP has been calculated by a Monte Carlo method. The results are compared with previously published results for GaAs, and used to indicate the performance that may be obtained in InP and GaAs microwave f.e.t.s.

Published in:

Electronics Letters  (Volume:10 ,  Issue: 7 )

Date of Publication:

April 4 1974

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